Dependence of Ga1-xMnxN Thin Films Growth on Substrate Temperature in Vertical MOCVD Reactor by Numerical Simulation

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Published Nov 3, 2016

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Budi Mulyanti
1) Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB). 2) Department of Electrical Engineering Education, Universitas Pendidikan Indonesia (UPI)
Fitri S. Arsyad
1) Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB). 2) Department of Physics, University of Sriwijaya (Unsri)
P. Arifin
Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB), Jl. Ganesa 10 Bandung, Indonesia
M. Budiman
Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB), Jl. Ganesa 10 Bandung, Indonesia
Sri Jatno W
Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB), Jl. Ganesa 10 Bandung, Indonesia
M. Barmawi
Laboratory of Electronic Material Physics, Department of Physics, Bandung Institute of Technology (ITB), Jl. Ganesa 10 Bandung, Indonesia

Abstract

Growth of Ga1-xMnxN thin film in the vertical MOCVD (Metal Organic Chemical Vapor Depositions) reactor as a function of substrate temperature is analyzed by numerical simulation. Gases that are used as a source of Ga, N and Mn are trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnTc), respectively. Hydrogen (H2) is used as a carrier gas for both TMGa and CpMnTc. The objective of simulation is to obtain an optimal growth parameter, in which the growth rate is high and uniform. From the simulation results, it can be concluded that to achieve a highest growth rate, the substrate temperature should be maintained at about 1173 K and with this temperature the growth rate is nearly constant when the susceptor radial distance is between 3.5 cm and 4.5 cm.

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How to Cite
Mulyanti, B., Arsyad, F. S., Arifin, P., Budiman, M., Jatno W, S., & Barmawi, M. (2016). Dependence of Ga1-xMnxN Thin Films Growth on Substrate Temperature in Vertical MOCVD Reactor by Numerical Simulation. Indonesian Journal of Physics, 15(3), 59-63. Retrieved from https://ijphysics.fi.itb.ac.id/index.php/ijp/article/view/110
Issue
Vol 15 No 3 (2004): Vol. 15 No. 3, July 2004
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Articles