Growth of Amorphous Silicon Germanium (a-SiGe:H) Alloys Thin Film by PECVD

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Published Nov 3, 2016

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Mursal Mursal
Department of Physics, Syiah Kuala University, Banda Aceh
A. Supu
Department of Physics, Nusa Cendana University, Kupang
I. Usman
Department of Physics, Haluoleo University, Kendari
T. Winata
Laboratory For Materials Electronic Physics, Department of Physics, ITB
Sukirno Sukirno
Laboratory For Materials Electronic Physics, Department of Physics, ITB
M. Barmawi
Laboratory For Materials Electronic Physics, Department of Physics, ITB

Abstract

Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloys thin films had been grown by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The films were grown on corning glass # 7059 from a gas mixture of silane (SiH4) and germane (GeH4) 10% diluted in hydrogen (H2). UV-VIS-NIR spectra analysis of a-SiGe:H alloys thin films showed that the sub-bandgap absorption α(hν) spectra of a-SiGe:H alloys shift to lower photon energy with increasing in GeH4 flow rate. 


The optical bandgap of a-SiGe:H alloy decreased non linearly from 0.94 eV – 0.75 eV with increasing in GeH4 flow rate from 2.5 sccm – 25 sccm. The photo-sensitivity (σph/σd) of a-SiGe:H thin films were improved as the optical bandgap (Eopt) increased.

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How to Cite
Mursal, M., Supu, A., Usman, I., Winata, T., Sukirno, S., & Barmawi, M. (2016). Growth of Amorphous Silicon Germanium (a-SiGe:H) Alloys Thin Film by PECVD. Indonesian Journal of Physics, 15(2), 39-42. Retrieved from https://ijphysics.fi.itb.ac.id/index.php/ijp/article/view/106
Issue
Vol 15 No 2 (2004): Vol. 15 No.2, April 2004
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