A Modelling of Tunnelling Current through a Trapezoidal Potential Barrier by Using Exponential Wavefunction Approach
Main Article Content
Abstract
A tunnelling current through a trapezoidal barrier potential has been modelled. The transmittance is determined using the exponential wavefunction approach method. Furthermore, the transmittance is used to calculate the tunnelling current density by applying the Gauss-Laguerre quadrature method. The simulation results show the increasing bias voltage causes the raising tunnelling current, and an increase of temperature is proportional to the tunnelling current.
Downloads
Download data is not yet available.
Article Details
How to Cite
-, F. (2021). A Modelling of Tunnelling Current through a Trapezoidal Potential Barrier by Using Exponential Wavefunction Approach. Indonesian Journal of Physics, 32(1), 29-31. https://doi.org/10.5614/itb.ijp.2021.32.1.4
Section
Articles
References
[1] Kartiwa, G. M., Noor, F. A., & Sulthoni, M. A. (2019). Electron Transmittance Profile Through Non-linear Potential Barrier of Sharp-shaped Electrode. IEEE.
[2] Noor, F. A., Nabila, E., Mardianti, H., Istiqomah, T. A., & Kairurrijal. (2019). Modeling of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier by Considering the Spin Polarization Effect. Journal of Physics.
[3] Nabila, E., Noor, F. A., & Khairurrijal. (2017). Comparison of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier with Spin Polarization Consideration by using Analytical and Numerical Approaches. IOP Conference Series: Materials Science and Engineering.
[4] Zhang, P. (2015). Scaling for Quantum Tunneling Current in Nano- and Subnano-scale Plasmonic Junctions. Scientific Reports.
[5] Tsutsumi, T., Sugitani, S., Nishimura, K., & Ida, M. (2011). New Stacked Metal–Insulator–Metal Capacitor with High Capacitance Density for Future InP-Based ICs. Japanese Journal of Applied Physics.
[6] Grover, S., & Moddel, G. (2011). Applicability of Metal/Insulator/Metal (MIM) Diodes to Solar Rectennas. IEEE Journal of Photovoltaics.
[7] Vallѐe, T. (2018). Computing the zeros and weights of Gauss-Laguerre and Gauss-Hermite quadratures: 2 Matlab files. HAL.
[2] Noor, F. A., Nabila, E., Mardianti, H., Istiqomah, T. A., & Kairurrijal. (2019). Modeling of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier by Considering the Spin Polarization Effect. Journal of Physics.
[3] Nabila, E., Noor, F. A., & Khairurrijal. (2017). Comparison of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier with Spin Polarization Consideration by using Analytical and Numerical Approaches. IOP Conference Series: Materials Science and Engineering.
[4] Zhang, P. (2015). Scaling for Quantum Tunneling Current in Nano- and Subnano-scale Plasmonic Junctions. Scientific Reports.
[5] Tsutsumi, T., Sugitani, S., Nishimura, K., & Ida, M. (2011). New Stacked Metal–Insulator–Metal Capacitor with High Capacitance Density for Future InP-Based ICs. Japanese Journal of Applied Physics.
[6] Grover, S., & Moddel, G. (2011). Applicability of Metal/Insulator/Metal (MIM) Diodes to Solar Rectennas. IEEE Journal of Photovoltaics.
[7] Vallѐe, T. (2018). Computing the zeros and weights of Gauss-Laguerre and Gauss-Hermite quadratures: 2 Matlab files. HAL.